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STGB4M65DF2

STGB4M65DF2

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制造商部分
STGB4M65DF2
制造商
STMicroelectronics
描述
TRENCH GATE FIELD-STOP IGBT, M S
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
4074
在线数据表
-
询问

Product Specifications

Type 描述
系列:M
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):8 A
电流 - 集电极脉冲 (icm):16 A
vce(on) (max) @ vge, ic:2.1V @ 15V, 4A
功率 - 最大值:68 W
开关能量:40µJ (on), 136µJ (off)
输入类型:Standard
栅极电荷:15.2 nC
td(开/关)@ 25°c:12ns/86ns
测试条件:400V, 4A, 47Ohm, 15V
反向恢复时间 (trr):133 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商设备包:D2PAK

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