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| Type | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 168 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 10.918 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 263W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
RJK0656DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 40A LFPAK |
有存货: 0 $1.33600 |
 |
IPD65R225C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO252-3 |
有存货: 6,916 $2.57000 |
 |
IPB107N20NAATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |
有存货: 6,509 $8.49000 |
 |
IPD14N06S280ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO252-3 |
有存货: 10,000 $0.23000 |
 |
FDD3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.5/44A TO252AA |
有存货: 276 $1.53000 |
 |
BUK7640-100A,118Nexperia |
MOSFET N-CH 100V 37A D2PAK |
有存货: 166 $1.03000 |
 |
NDP603ALFairchild (ON Semiconductor) |
MOSFET N-CH 30V 25A TO220-3 |
有存货: 34,234 $0.29000 |
 |
STD3N80K5STMicroelectronics |
MOSFET N-CH 800V 2.5A DPAK |
有存货: 4,896 $1.33000 |
 |
NTD3817N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 16V 7.6A/34.5A IPAK |
有存货: 15,525 $0.18000 |
 |
IRF614PBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A TO220AB |
有存货: 0 $0.75735 |
