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BUK7Y35-55B,115

BUK7Y35-55B,115

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制造商部分
BUK7Y35-55B,115
制造商
NXP Semiconductors
描述
PFET, 28.43A I(D), 55V, 0.035OHM
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1385
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):55 V
电流 - 连续漏极 (id) @ 25°c:28.43A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:35mOhm @ 15A, 10V
vgs(th) (最大值) @ id:4V @ 1mA
栅极电荷 (qg) (max) @ vgs:13.1 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:781 pF @ 25 V
场效应管特征:-
功耗(最大值):60W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:LFPAK56, Power-SO8
包/箱:SC-100, SOT-669

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