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NVMSD6N303R2G

NVMSD6N303R2G

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制造商部分
NVMSD6N303R2G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 30V 6A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
24568
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:6A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:32mOhm @ 6A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:30 nC @ 10 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:950 pF @ 24 V
场效应管特征:Schottky Diode (Isolated)
功耗(最大值):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-SOIC
包/箱:8-SOIC (0.154", 3.90mm Width)

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