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FDD10N20LZTM

FDD10N20LZTM

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制造商部分
FDD10N20LZTM
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 200V 7.6A DPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
162252500
在线数据表
-
询问

Product Specifications

Type 描述
系列:UniFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:7.6A (Tc)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:360mOhm @ 3.8A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:16 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:585 pF @ 25 V
场效应管特征:-
功耗(最大值):83W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:DPAK
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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