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FDV303N

FDV303N

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制造商部分
FDV303N
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 25V 680MA SOT23
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
107924
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):25 V
电流 - 连续漏极 (id) @ 25°c:680mA (Ta)
驱动电压(最大 rds on,最小 rds on):2.7V, 4.5V
rds on (max) @ id, vgs:450mOhm @ 500mA, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:2.3 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:50 pF @ 10 V
场效应管特征:-
功耗(最大值):350mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SOT-23
包/箱:TO-236-3, SC-59, SOT-23-3

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