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SCT2H12NYTB

SCT2H12NYTB

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制造商部分
SCT2H12NYTB
制造商
ROHM Semiconductor
描述
SICFET N-CH 1700V 4A TO268
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
647
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1700 V
电流 - 连续漏极 (id) @ 25°c:4A (Tc)
驱动电压(最大 rds on,最小 rds on):18V
rds on (max) @ id, vgs:1.5Ohm @ 1.1A, 18V
vgs(th) (最大值) @ id:4V @ 410µA
栅极电荷 (qg) (max) @ vgs:14 nC @ 18 V
vgs (最大值):+22V, -6V
输入电容 (ciss) (max) @ vds:184 pF @ 800 V
场效应管特征:-
功耗(最大值):44W (Tc)
工作温度:175°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-268
包/箱:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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