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2N6667

2N6667

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制造商部分
2N6667
制造商
NTE Electronics, Inc.
描述
T-PNP SI-GEN PUR AMP
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单
系列
-
有存货
708
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bag
零件状态:Active
晶体管型:PNP - Darlington
电流 - 集电极 (ic) (max):10 A
电压 - 集电极发射极击穿(最大值):60 V
vce 饱和度(最大值)@ ib, ic:3V @ 100mA, 10A
电流 - 集电极截止(最大值):1mA
直流电流增益 (hfe) (min) @ ic, vce:1000 @ 5A, 3V
功率 - 最大值:2 W
频率转换:-
工作温度:-65°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-220-3
供应商设备包:TO-220AB

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